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DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D121
PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes
Product specification Supersedes data of 1996 May 03 1999 Apr 22
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES * Low switching losses * Fast recovery time * Guard ring protected * Hermetically sealed glass SMD package. APPLICATIONS * Low power, switched-mode power supplies * Rectifying * Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
PRLL5817; PRLL5818; PRLL5819
handbook, halfpage
k
a
MAM190
Fig.1 Simplified outline (SOD87) and symbol.
MARKING TYPE NUMBER PRLL5817 PRLL5818 PRLL5819 9 9 9 MARKING CODE
1999 Apr 22
2
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR PRLL5817 PRLL5818 PRLL5819 VRSM non-repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRRM repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRWM crest working reverse voltage PRLL5817 PRLL5818 PRLL5819 IF(AV) IFSM Tstg Tj average forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 60 C t = 10 ms half sine wave; Tj = Tj max prior to surge: VR = 0 - - - - - -65 - 20 30 40 1 25 +175 125 V V V A A C C - - - 20 30 40 V V V - - - 24 36 48 V V V PARAMETER continuous reverse voltage - - - 20 30 40 V V V CONDITIONS MIN. MAX. UNIT
1999 Apr 22
3
Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PRLL5817 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage PRLL5818 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage PRLL5819 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A IR Cd reverse current diode capacitance PRLL5817 PRLL5818 PRLL5819 Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD87 standard mounting conditions. PARAMETER thermal resistance from junction to ambient VR = VRRMmax; note 1
PRLL5817; PRLL5818; PRLL5819
CONDITIONS - - - - - - - - - - - - - -
MIN. - - - - - - - - -
TYP.
MAX. 320 450 750 330 550 875 340 600 900 1 10 - - -
UNIT
mV mV mV mV mV mV mV mV mV mA mA pF pF pF
0.5 5 70 50 50
VR = VRRMmax; Tj = 100 C VR = 4 V; f = 1 MHz
CONDITIONS note 1
VALUE 150
UNIT K/W
1999 Apr 22
4
Philips Semiconductors
Product specification
Schottky barrier diodes
GRAPHICAL DATA
PRLL5817; PRLL5818; PRLL5819
handbook, halfpage
5
MBE634
IF (A)
4
Tj = 125 oC
25 oC
3
2
1
0 0 0.5 VF (V) 1
Fig.2 Typical forward voltage.
1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1
MBE642
0.5
0 0 0.5 1 1.5 IF(AV) (A) 2
Fig.3
PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 5
1999 Apr 22
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1
MBE641
0.5
0 0 0.5 1 1.5 IF(AV) (A) 2
Fig.4
PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV).
1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1
MBE643
0.5
0 0 0.5 1 1.5 IF(AV) (A) 2
Fig.5
PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 6
1999 Apr 22
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
200
MBE635
MBE640
VRWM Tj (oC) 0.1 VRWM VR
= 0.5
= 0.2
= 0.2
PR (W)
100 VR = 0.5 0.05
0 0 10 VR (V) 20
0 0 10 VR (V) 20
Fig.6
PRLL5817. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions.
Fig.7
PRLL5817. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions.
200
MBE636
MBE638
VRWM Tj (oC) 0.1 VRWM = 0.2 VR
= 0.5
= 0.2
PR (W)
100 VR = 0.5 0.05
0 0 20 VR (V) 40
0 0 20 VR (V) 40
Fig.8
PRLL5818. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions.
Fig.9
PRLL5818. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions.
1999 Apr 22
7
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
200
MBE637
MBE639
VRWM Tj (oC) 0.1 VRWM = 0.2 VR
= 0.5
= 0.2
PR (W)
100 VR = 0.5 0.05
0 0 10 VR (V) 20
0 0 20 VR (V) 40
Fig.10 PRLL5819. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions.
Fig.11 PRLL5819. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions.
1999 Apr 22
8
Philips Semiconductors
Product specification
Schottky barrier diodes
PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors
PRLL5817; PRLL5818; PRLL5819
SOD87
k
(2)
a
D1
D
L DIMENSIONS (mm are the original dimensions) UNIT mm D 2.1 2.0 D1 2.0 1.8 H 3.7 3.3 L 0.3 H
L
0
1 scale
2 mm
Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. OUTLINE VERSION SOD87 REFERENCES IEC 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Apr 22
9
Philips Semiconductors
Product specification
Schottky barrier diodes
NOTES
PRLL5817; PRLL5818; PRLL5819
1999 Apr 22
10
Philips Semiconductors
Product specification
Schottky barrier diodes
NOTES
PRLL5817; PRLL5818; PRLL5819
1999 Apr 22
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 Apr 22
Document order number:
9397 750 05474

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